N. S. Maslova, A. I. Oreshkin, S. I. Oreshkin, V. I. Panov, I. V. Radchenko, S. V. Savinov, “Ag-induced atomic structures on the Si(110) surface”, Письма в ЖЭТФ, 2006, том 84, выпуск 6,страницы 381

Эта публикация цитируется в 10 статьях

КОНДЕНСИРОВАННЫЕ СРЕДЫ

Ag-induced atomic structures on the Si(110) surface

N. S. Maslova^a, A. I. Oreshkin^a, S. I. Oreshkin^ab, V. I. Panov^a, I. V. Radchenko^a, S. V. Savinov^a

^a Moscow State University, Department of Physics
^b Sternberg Astronomical Institute, Moscow State University

Аннотация: We report the results of STM investigation of initial stage of Ag adsorption on the Si(110) surface. At 0.21 ML Ag coverage the size and orientation of unit cell correspond to parameters of "$16\times2$" unit cell of clean Si(110) surface. With increasing of Ag coverage up to 0.42 ML the type of surface reconstruction is changing to $4\times1$-Si(110)-Ag structure.

PACS: 68.37.Ef, 68.47.Fg

Поступила в редакцию: 17.07.2006

Язык публикации: английский