Low-temperature conductance of the weak junction in InAs nanowire in the field of AFM scanning gate

We investigate the conductance of the InAs nanowire in the presence of electrical potential created by AFM scanning gate. At helium temperature Coulomb blockade diamonds pattern give the same result for quantum dot sizes ratio as reveals scanning gate imaging. The essential influence of local electrical field direction on the tunneling rate through the weak junction in InAs wire is observed. To explain this behavior the redistribution of the electrons among conductive channels in the wire must be taken into account.