Novel self-assembled quantum dots in the GaSb/AlAs heterosystem

Novel self-assembled quantum dots (QDs) in the GaSb/AlAs heterosystem were obtained and studied by means of transmission electron microscopy, steady-state and transient photoluminescence. A strong intermixing of both III and V group materials results in the fabrication of quaternary alloy QDs in the AlAs matrix. The QDs have atypical energy structure: band alignment of type I with the lowest electronic state at the indirect X minimum of the conduction band.