Ab initio search of novel bipolar magnetic semiconductors: layered YZnAsO doped with Fe and Mn

Very recently, the newest class of spintronic materials, where reversible spin polarization can be controlled by applying gate voltage: so-called bipolar magnetic semiconductors (BMSs, X. Li et al., arXiv:1208.1355) was proposed. In this Letter, a novel way to creation of BMSs by doping of non-magnetic semiconducting 1111 phases with magnetic $d^{n<10}$ atoms is discussed using ab initio calculations of layered YZnAsO doped with Fe and Mn. In addition, more complex materials with several spectral intervals with opposite $100\%$ spin polarization where multiple gate-controlled spin-polarization can be expected, are proposed.