Аннотация:
We present the results of numerical modeling of Ge(111)-(2$\times$1) surface
electronic properties in vicinity of P donor impurity atom near the surface. We
show, that despite of well established bulk donor impurity energy level position
at the very bottom of conduction band, surface donor impurity might produce
energy level below Fermi energy, depending on impurity atom local
environment. It was demonstrated, that impurity, located in subsurface atomic
layers, is visible in STM experiment. The quasi-1D character of impurity image,
observed in STM experiments, is confirmed by our computer simulations.