Аннотация:
The results of the simulations by Monte Carlo method of graphene with
structural defects are presented.
The calculations are performed within an effective quantum field theory with
non-compact $3+ 1$-dimensional Abelian gauge field and
$2 + 1$-dimensional Kogut–Susskind fermions. It was found that
defects shift the phase transition point semimetal-insulator
towards higher values of a substrate permittivity.