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ЖУРНАЛЫ // Письма в Журнал экспериментальной и теоретической физики // Архив

Письма в ЖЭТФ, 2010, том 92, выпуск 1, страницы 43–46 (Mi jetpl763)

Эта публикация цитируется в 2 статьях

КОНДЕНСИРОВАННЫЕ СРЕДЫ

Double-occupancy probability and entanglement of two holes in double Ge/Si quantum dots

A. I. Yakimov, A. A. Bloshkin, A. V. Dvurechenskii

Rzhanov Institute of Semiconductor Physics, Siberian Branch RAS

Аннотация: We have calculated the exchange energy, double occupation probability of the lowest singlet state, and degree of entanglement of two holes in vertically coupled double Ge/Si quantum dots. We determined the conditions on which the exchange coupling is large enough for a fast swap operation in quantum computation and the double-occupancy probability is still low, thus maximizing the entanglement for a small computation error. We found that both the degree of entanglement and double-occupancy probability for quantum dots with different dot size collapse onto universal, size independent curves when plotted as a function of singlet-triplet splitting.

Поступила в редакцию: 11.05.2010

Язык публикации: английский


 Англоязычная версия: Journal of Experimental and Theoretical Physics Letters, 2010, 92:1, 36–39

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