A. I. Oreshkin, V. N. Mantsevich, N. S. Maslova, D. A. Muzychenko, S. I. Oreshkin, V. I. Panov, S. V. Savinov, P. I. Arseev, “The influence of different impurity atoms on $1/f^\alpha$ tunneling current noise characteristics on InAs(110) surface”, Письма в ЖЭТФ, 2007, том 85, выпуск 1,страницы 46

Эта публикация цитируется в 9 статьях

КОНДЕНСИРОВАННЫЕ СРЕДЫ

The influence of different impurity atoms on $1/f^\alpha$ tunneling current noise characteristics on InAs(110) surface

A. I. Oreshkin^a, V. N. Mantsevich^a, N. S. Maslova^a, D. A. Muzychenko^a, S. I. Oreshkin^ab, V. I. Panov^a, S. V. Savinov^a, P. I. Arseev^c

^a Moscow State University, Department of Physics
^b Sternberg Astronomical Institute, Moscow State University
^c P. N. Lebedev Physical Institute, Russian Academy of Sciences

Аннотация: We report the results of UHV STM investigations of tunneling current noise spectra in vicinity of individual impurity atoms on the InAs(110) surface. It was found out that the power law exponent of $1/f^\alpha$ noise depends on the presence of impurity atom in the tunneling junction area. This is consistent with proposed theoretical model considering tunneling current through two state impurity complex model system taking into account many-particle interaction.

PACS: 68.37.Ef, 71.55.Eq

Поступила в редакцию: 20.11.2006

Язык публикации: английский