New n-type semiconductor material based on styryl fullerene for organic field-effect transistors

Organic field-effect transistors with styryl fullerene as a semiconductor layer applied by centrifugation are considered. Electron mobility in the transistors was 0.067 ± 10% cm2 V–1 s–1, whereas the mobility of electrons in these devices after the vacuum deposition of a semiconductor layer was much lower (0.023 ± 10% cm2 V–1 s–1).