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ЖУРНАЛЫ // Mendeleev Communications // Архив

Mendeleev Commun., 2024, том 34, выпуск 5, страницы 643–646 (Mi mendc207)

Communications

Sol–gel prepared ZnO: UV irradiation effect on structure and surface properties

I. V. Sukhova, I. A. Filippova, I. A. Pronina, V. V. Sysoevb, V. M. Kondratevcd, A. S. Komolove, E. F. Laznevae, A. A. Karmanova, N. D. Yakushovaa, V. A. Moshnikovf, G. Korotcenkovg

a Department of Nano- and Microelectronics, Penza State University, Penza, Russian Federation
b Yuri Gagarin State Technical University of Saratov, Saratov, Russian Federation
c Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow Region, Russian Federation
d Alferov University, St. Petersburg, Russian Federation
e Resource Center 'Physical Methods of Surface Investigation', St. Petersburg State University, St. Petersburg, Russian Federation
f St. Petersburg Electrotechnical University 'LETI', St. Petersburg, Russian Federation
g Department of Physics and Engineering, Moldova State University, Chisinau, Moldova


Аннотация: The effect of UV irradiation on sol–gel prepared ZnO films subjected to mild thermal annealing was investigated, with special attention to their structural and surface properties. Sol–gel processes, including a high-temperature annealing stage, have been adapted to the requirements of flexible electronics for in situ synthesis of semiconductor ZnO films on polymer substrates at lower temperatures due to UV irradiation. Application of UV radiation with emission peaks at 185 and 254 nm to films annealed at 180 °C made it possible to obtain ZnO films with Zn/O ratios of ca. 1, which cannot be achieved by heat treatment alone.

Ключевые слова: sol–gel technology, epidermal electronics, zinc oxide, UV irradiation effect, XPS.

Язык публикации: английский

DOI: 10.1016/j.mencom.2024.09.006



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