N. M. Rubtsov, B. S. Seplyarskii, G. V. Bichurov, V. I. Chernysh, G. I. Tsvetkov, “Gaseous nature of the reaction of Si–N bond formation in self-propagation high-temperature synthesis of silicon nitride by means of an azide method”, Mendeleev Commun., 2009, том 19, выпуск 1,страницы 45

Эта публикация цитируется в 1 статье

Gaseous nature of the reaction of Si–N bond formation in self-propagation high-temperature synthesis of silicon nitride by means of an azide method

N. M. Rubtsov^a, B. S. Seplyarskii^a, G. V. Bichurov^b, V. I. Chernysh^a, G. I. Tsvetkov^a

^a A.G. Merzhanov Institute of Structural Macrokinetics and Materials Science, Russian Academy of Sciences, Chernogolovka, Moscow Region, Russian Federation
^b Samara State Technical University, Samara, Russian Federation

Аннотация: Both solid sodium azide and ammonium chloride react with volatile silicon-containing compounds under external initiation; in the reactions Si–N bond forms as evidenced by detecting the emission spectrum of SiN (C–A²P) radicals.

Язык публикации: английский

DOI: 10.1016/j.mencom.2009.01.018