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ЖУРНАЛЫ // Наносистемы: физика, химия, математика // Архив

Наносистемы: физика, химия, математика, 2017, том 8, выпуск 6, страницы 782–786 (Mi nano102)

Эта публикация цитируется в 3 статьях

CHEMISTRY AND MATERIAL SCIENCE

CdS quantum dot sensitized zinc oxide based solar cell with aluminum counter electrode

A. Gangulya, S. S. Nathb, G. Gopeb, M. Choudhurya

a National Institute of Technology, Silchar, Assam-788010, India
b CIL, Assam University, Silchar, Assam-788011, India

Аннотация: High cost conducting metals such as Au or Pt are generally used as counter electrodes in quantum dot sensitized solar cells. In this article, we report working of a CdS quantum dot sensitized ZnO thin film solar cell, having FTO as working electrode and aluminium as counter electrode. The CdS quantum dots are prepared by simple low cost chemical technique and characterized by absorption spectroscopy, X-ray diffraction, atomic force microscopy and high resolution trans electron microscopy. These quantum dots are used as an active layer in a solar cell and current density-voltage characteristic of the solar cell is obtained under white light illumination and dark conditions.

Ключевые слова: CdS quantum dots, solar cell, Al counter electrode.

Поступила в редакцию: 20.09.2017
Исправленный вариант: 12.10.2017
Принята в печать: 01.11.2017

Язык публикации: английский

DOI: 10.17586/2220-8054-2017-8-6-782-786



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