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ЖУРНАЛЫ // Наносистемы: физика, химия, математика // Архив

Наносистемы: физика, химия, математика, 2016, том 7, выпуск 3, страницы 523–527 (Mi nano233)

Эта публикация цитируется в 1 статье

Papers, presented at NANO-2015

Chemosynthesis, characterization and PEC performance of $\mathrm{CdZn}(\mathrm{SSe})_2$ thin films by arrested precipitation technique (APT)

S. K. Jagadale, D. B. Shinde, R. M. Mane, K. V. Khot, V. B. Ghanwat, P. N. Bhosale, R. K. Mane

Materials Research Laboratory, Department of Chemistry, Shivaji University, Kolhapur-416004, India

Аннотация: In the present work, we have used simple, cost effective arrested precipitation technique (APT) to deposit $\mathrm{CdZn}(\mathrm{SSe})_2$ thin films. Preparative conditions were optimized during the initial stage of experimentation to obtain good quality $\mathrm{CdZn}(\mathrm{SSe})_2$ thin films. The as-deposited film was studied for its structural, morphological, optical, and compositional analysis by XRD, SEM, UV-Vis-NIR spectrophotometer and EDS-analysis techniques respectively. XRD analysis revealed that the film was polycrystalline in nature and exhibit hexagonal crystal structure. The SEM micrograph shows the formation of spherical surface morphology. EDS results confirm the presence of $\mathrm{Cd}$, $\mathrm{Zn}$, $\mathrm{S}$ and $\mathrm{Se}$ elements in the synthesized thin film. The band gap value of thin film was calculated from the absorption spectra which is found to be $1.8$ eV. From J-V measurements, photoconversion efficiency is found to be $0.07$ %.

Ключевые слова: arrested precipitation technique, thin films, XRD, photoconversion efficiency.

Поступила в редакцию: 04.02.2016
Исправленный вариант: 10.04.2016

Язык публикации: английский

DOI: 10.17586/2220-8054-2016-7-3-523-527



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