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ЖУРНАЛЫ // Наносистемы: физика, химия, математика // Архив

Наносистемы: физика, химия, математика, 2016, том 7, выпуск 3, страницы 553–557 (Mi nano239)

Papers, presented at NANO-2015

Facile synthesis of $(\mathrm{CdZn})\mathrm{Se}$ nanocrystalline thin films via arrested precipitation technique (APT) for photovoltaic application

Chaitali. S. Bagade, Vishvnath. B. Ghanwat, Kishorkumar. V. Khot, Pallavi. B. Patil, Rahul. M. Mane, P. N. Bhosale

Materials Research Laboratory, Department of Chemistry, Shivaji University, Kolhapur 416004, India

Аннотация: Nanocrystalline $(\mathrm{CdZn})\mathrm{Se}$ thin films have been successfully synthesized via a simple and cost effective arrested precipitation technique. The deposition and synthetic strategy of $(\mathrm{CdZn})\mathrm{Se}$ thin films exert appreciable influence on the photovoltaic properties of solar cells. In this paper, systematic characterizations of optostructural, morphological, compositional and electrochemical properties have been carried out. The optical band gap was evaluated from UV-Vis-NIR spectra at wavelengths ranging from $400$$1100$ nm. X-ray diffraction (XRD) pattern reveals that the deposited film was nanocrystalline in nature and exhibited a cubic crystal structure. The dependency of microstructural parameters such as crystallite size has been studied. Scanning electron microscopy (SEM) images demonstrate that surface morphology was uniform, dense, smooth and well adhered to substrate surface. The as-deposited nanorystalline $(\mathrm{CdZn})\mathrm{Se}$ thin film exhibits $0.61$ % conversion efficiency at room temperature.

Ключевые слова: $(\mathrm{CdZn})\mathrm{Se}$, arrested precipitation technique (APT), thin films, semiconductor material, solar cells.

PACS: 81

Поступила в редакцию: 02.02.2016
Исправленный вариант: 11.04.2016

Язык публикации: английский

DOI: 10.17586/2220-8054-2016-7-3-553-557



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