Modification of nanoscale thermal oxide films formed on indium phosphide under the influence of tin dioxide

The kinetic parameters and the limiting stage of the defining process were established by studying the thermal oxidation of SnO$_2$/InP heterostructures (thickness of SnO$_2$ layer $\sim$ 50 nm). It was established that SnO$_2$ does not have a chemical stimulating effect on the film growth rate; however, it is effective as a modifier of their structure and properties. SnO$_2$ provides the formation of nanoscale films with semiconductor properties.