Fabrication and characterization of spectrally selective glazing dielectric multilayer structures

We report the fabrication of three- and five-layered based TiO$_{2}$/SiO$_{2}$ dielectric structures as the back-end reflector application in thin film silicon solar cells. These dielectric structures are prepared by the combined sol-gel and spin-coating techniques. X-ray diffraction (XRD) analysis of both the three- and five-layered based structures confirmed the anatase phase of TiO$_{2}$ with its dominant peak at 2O=25$^{\circ}$. Field-emission scanning electron microscopy (FESEM) study demonstrated the formation of three and five alternate layers of TiO$_{2}$ and SiO$_{2}$ films. Comparatively, five-layered based reflector yielded the maximum (100 %) reflectance in the near-infrared (NIR) wavelength region as evidenced by the UV-Vis spectroscopy investigation.