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ЖУРНАЛЫ // Наносистемы: физика, химия, математика // Архив

Наносистемы: физика, химия, математика, 2017, том 8, выпуск 6, страницы 740–745 (Mi nano99)

PHYSICS

Kinetic coefficients of semiconductor superlattices in high-frequency electromagnetic fields

A. V. Shorokhova, N. S. Prudskikha, M. B. Semenovb, V. D. Krevchikb, M. A. Pyataeva, S. E. Golovatyuka, Tian-Rong Lic, Yu-Hua Wangc

a National Research Mordovia State University, Bolshevistskaya, 68, Saransk, 430005, Russia
b Penza State University, Krasnaya, 40, Penza, 440026, Russia
c Institute of Functional and Environmental Materials, Lanzhou University, Lanzhou, China

Аннотация: Kinetic coefficients of semiconductor superlattice are obtained from the Boltzmann transport equation with Bhatnagar–Gross–Krook (BGK) collision term and Poisson equation. Using the universal analytic procedure, we found kinetic coefficient in the quasistatic limit starting from the exact solution of the Boltzmann transport equation. It is shown that the Einstein relation for the diffusion coefficient is applicable only for weak fields and it is not valid in the general case. As a consequence, a drift-diffusion model of miniband transport in the case of strong dc and ac fields should be corrected, taking into account the kinetic coefficients obtained from the Boltzmann equation.

Ключевые слова: superlattice, Boltzmann equation, drift-diffusion model, THz radiation, diffusion coefficient, drift velocity, Maxwell frequency, Einstein relation.

PACS: 73.63.-b

Поступила в редакцию: 13.11.2017
Исправленный вариант: 29.11.2017

Язык публикации: английский

DOI: 10.17586/2220-8054-2017-8-6-740-745



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