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ЖУРНАЛЫ // Наносистемы: физика, химия, математика // Архив

Наносистемы: физика, химия, математика, 2015, том 6, выпуск 6, страницы 837–842 (Mi nano999)

The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layeror at SiO$_2$ – Si$_3$N$_4$ interfaceat

A. E. Atamuratova, U. A. Aminovb, Z. A. Atamuratovab, M. Halillaevb, A. Abdikarimovb, H. R. Matyakubovb

a Urganch Branch of Tashkent University of Information Technologies, Tashkent, Uzbekistan
b Urganch State Universityy, Tashkent, Uzbekistan

Аннотация: In this work the dependence between the position of single charge trapped in an oxide layer or at SiO$_2$ – Si$_3$N$_4$ interface and the concentration distribution of charge carriers on a semiconductor substrate surface of the nanometer n-channel Metal-Nitride-Oxide-Semiconductor Field Effect Transistor (MNOSFET) and p-channel MNOSFET with n$^+$ drain area is studied. It is shown that the lateral capacitances of nanometer MNOSFET depend on the position of single charge in oxide or at interface. This dependence allows one to estimate the position of trapped charges along the channel of transistor.

Ключевые слова: defects, lateral capacitances, oxide trapped charge, interface trapped charge, nanometer MNOSFET.

PACS: 85.30.Tv

Поступила в редакцию: 01.11.2015

Язык публикации: английский

DOI: 10.17586/2220-8054-2015-6-6-837-842



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