P. S. Parfenov, A. P. Litvin, D. A. Onishchuk, K. A. Gonchar, K. Berwick, A. V. Fedorov, A. V. Baranov, “The effect of high background and dead time of an InGaAs/InP single-photon avalanche photodiode on the registration of microsecond range near-infrared luminescence”, Оптика и спектроскопия, 2020, том 128, выпуск 5,страница 669

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Оптические сенсоры и преобразователи

The effect of high background and dead time of an InGaAs/InP single-photon avalanche photodiode on the registration of microsecond range near-infrared luminescence

P. S. Parfenov^a, A. P. Litvin^a, D. A. Onishchuk^a, K. A. Gonchar^b, K. Berwick^c, A. V. Fedorov^a, A. V. Baranov^a

^a School of Photonics, ITMO University, Saint-Petersburg, Russia
^b Department of Physics, Lomonosov Moscow State University, Moscow, Russia
^c School of Electrical and Electronic Engineering, Technological University Dublin, Ireland

Аннотация: The effects of a high background count and a microsecond dead time interval on a gated InGaAs/InP single-photon avalanche photodiode (SPAD) during microsecond luminescence decay registration are discussed. It is shown that the background count rate of the SPAD limits its use for time-resolved and steady-spectral measurements, and that a “pile-up” effect appears in the microsecond range.

Ключевые слова: near-infrared detector; photon counting; single-photon avalanche diode (SPAD), pile-up, counting loss.

Поступила в редакцию: 27.01.2020
Исправленный вариант: 27.01.2020
Принята в печать: 06.02.2020

Язык публикации: английский