полупроводники, лазеры, квантовая оптика примесных центров, метод пробного импульса, спектроскопия
Основные публикации:
Pavlov, S. G., Deßmann, N., Pohl, A., Zhukavin, R. K., Klaassen, T. O., Abrosimov, N. V., ... & Hübers, H. W., “Terahertz transient stimulated emission from doped silicon”, APL Photonics, 5:10 (2020), 106102
Zhukavin, R. K., Kovalevsky, K. A., Pavlov, S. G., Deßmann, N., Pohl, A., Tsyplenkov, V. V., ... & Shastin, V. N., “Frequency Tuning of Terahertz Stimulated Emission under the Intracenter Optical Excitation of Uniaxially Stressed Si: Bi.”, Semiconductors, 54:8 (2020), 969
Zhukavin, R. K., Pavlov, S. G., Stavrias, N., Saeedi, K., Kovalevsky, K. A., Phillips, P. J., ... & Shastin, V. N., “Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped silicon”, Journal of Applied Physics, 127:3 (2020), 035706
Zhukavin, R. K., Kovalevskii, K. A., Choporova, Y. Y., Tsyplenkov, V. V., Gerasimov, V. V., Bushuikin, P. A., ... & Shastin, V. N., “Relaxation times and population inversion of excited states of arsenic donors in germanium.”, JETP Letters, 110:10 (2019), 677
S. G. Pavlov, N. Deßmann, B. Redlich, A. F. G. van der Meer, N. V. Abrosimov, H. Riemann, R. Kh. Zhukavin, V. N. Shastin, H.-W. Hübers, “Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon”, Phys. Rev. X, 8 (2018), 041003
