Abstract:
Mathematical description of criteria for the formation of semiconductor heterostructures on silicon with sharp barrier transitions with accumulation of 2DEG during activation of splitting of quasi-Fermi levels by radiation sources is considered. By means of inversion, a large density of electron and/or hole 2D gas is created. The possibilities of optimization by doped modulation of graded heterojunction and quasi-electric built-in field in the technological process of endotaxy of thin films into silicon are determined. Optimization is carried out according to the parameters of the band gap width and concentrations of alloying impurities for I(V). The conditions of physical separation of 2D Fermi gas from impurity in the depletion mode with low scattering of interface roughness, which leads to high carrier mobility, are considered.
