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ЖУРНАЛЫ // Физика и техника полупроводников // Архив

Физика и техника полупроводников, 2018, том 52, выпуск 5, страница 506 (Mi phts5832)

Эта публикация цитируется в 11 статьях

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Characterization

Composition and band structure of the native oxide nanolayer on the ion beam treated surface of the GaAs wafer

V. M. Mikushkina, V. V. Bryzgalova, S. Yu. Nikonova, A. P. Solonitsynaa, D. E. Marchenkobc

a Ioffe Institute, 194021 St. Petersburg, Russia
b Helmholtz-Zentrum BESSY II, German-Russian Laboratory, D-12489 Berlin, Germany
c Technische Universität Dresden, D-01062 Dresden, Germany

Аннотация: Detailed information on GaAs oxide properties is important for solving the problem of passivating and dielectric layers in the GaAs-based electronics. The elemental and chemical compositions of the native oxide layer grown on the atomically clean surface of an $n$-GaAs (100) wafer etched by Ar$^+$ ions have been studied by synchrotron-based photoelectron spectroscopy. It has been revealed that the oxide layer is essentially enriched in the Ga$_2$O$_3$ phase which is known to be a quite good dielectric as compared to As$_2$O$_3$. The gallium to arsenic ratio reaches the value as high as [Ga]/[As] = 1.5 in the course of oxidation. The Ga-enrichment occurs supposedly due to diffusion away of As released in preferential oxidation of Ga atoms. A band diagram was constructed for the native oxide nanolayer on the $n$-GaAs wafer. It has been shown that this natural nanostructure has features of a $p$$n$ heterojunction.

Язык публикации: английский


 Англоязычная версия: Semiconductors, 2018, 52:5, 593–596

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