I. V. Shtrom, N. G. Filosofov, V. F. Agekyan, M. B. Smirnov, A. Yu. Serov, R. R. Reznik, K. E. Kudryavtsev, G. E. Cirlin, “Optical properties of GaN nanowires grown by MBE on SiC/Si(111) hybrid substrate”, Физика и техника полупроводников, 2018, том 52, выпуск 5,страница 509

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Characterization

Optical properties of GaN nanowires grown by MBE on SiC/Si(111) hybrid substrate

I. V. Shtrom^abc, N. G. Filosofov^c, V. F. Agekyan^c, M. B. Smirnov^c, A. Yu. Serov^c, R. R. Reznik^abd, K. E. Kudryavtsev^e, G. E. Cirlin^abd

^a St. Petersburg Academic University, Russian Academy of Sciences, 194021 St. Petersburg, Russia
^b Institute for Analytical Instrumentation, Russian Academy of Sciences, 190103 St. Petersburg, Russia
^c St. Petersburg State University, 199034 St. Petersburg, Russia
^d ITMO University, 197101 St. Petersburg, Russia
^e Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia

Аннотация: The aim of this work is to demonstrate the fundamental possibility of Si-doped GaN nanowires growth on the buffer layer of silicon carbide on silicon substrate and to investigate the optical characteristics of this structures.

Язык публикации: английский