I. P. Soshnikov, K. P. Kotlyar, N. A. Bert, D. A. Kirilenko, A. D. Bouravlev, G. E. Cirlin, “The features of GaAs nanowire SEM images”, Физика и техника полупроводников, 2018, том 52, выпуск 5,страница 510

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Characterization

The features of GaAs nanowire SEM images

I. P. Soshnikov^abc, K. P. Kotlyar^ad, N. A. Bert^b, D. A. Kirilenko^be, A. D. Bouravlev^abc, G. E. Cirlin^abcd

^a St. Petersburg Academic University, Russian Academy of Sciences, 194021 St. Petersburg, Russia
^b Ioffe Institute, 194021 St. Petersburg, Russia
^c Institute for Analytical Instrumentation, Russian Academy of Sciences, 190103 St. Petersburg, Russia
^d St. Petersburg State University, 199034 St. Petersburg, Russia
^e ITMO University, 197101 St. Petersburg, Russia

Аннотация: The detailed study of GaAs nanowires synthesized by molecular beam epitaxy performed by scanning electron microscopy allowed to reveal the presence of specific contrast in the images obtained. To understand the causes of the phenomenon the transmission electron microscopy of nanowire crystal structure was carried out. The results showed that it could be caused by the segments having polytypic crystal phase. It was also confirmed by the modelling of the electron beam scattering on such nanowire arrays.

Язык публикации: английский