N. N. Gerasimenko, N. S. Balakleyskiy, A. D. Volokhovskiy, D. I. Smirnov, O. A. Zaporozhan, “Ion synthesis: Si–Ge quantum dots”, Физика и техника полупроводников, 2018, том 52, выпуск 5,страница 516

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Technology

Ion synthesis: Si–Ge quantum dots

N. N. Gerasimenko^a, N. S. Balakleyskiy^a, A. D. Volokhovskiy^a, D. I. Smirnov^b, O. A. Zaporozhan^a

^a National Research University of Electronic Technology, 124498 Moscow, Russia
^b Lebedev Physical Institute of the Russian Academy of Sciences, 119333 Moscow, Russia

Аннотация: We present a method of Si–Ge QDs formation by ion beam implantation (IBI) technique and high temperature annealing for self-organization. Implantation doses varied from 10$^{14}$ to 10$^{17}$ cm$^{-2}$, ion energies ranged from 50 to 150 keV, annealing proceeded at temperature of 950 to 1050$^\circ$C in argon environment. Formed QDs show strong infrared (IR) photoluminescence (PL) in the temperature region 15–250 K.

Язык публикации: английский