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ЖУРНАЛЫ // Физика и техника полупроводников // Архив

Физика и техника полупроводников, 2018, том 52, выпуск 5, страница 517 (Mi phts5843)

Эта публикация цитируется в 2 статьях

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Technology

New method of porous Ge layer fabrication: structure and optical properties

E. B. Gorokhova, K. N. Astankovaa, I. A. Azarovab, V. A. Volodinab, A. V. Latyshevab

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk, Russia
b Novosibirsk State University, 630090 Novosibirsk, Russia

Аннотация: Porous germanium films were produced by selective removal of the GeO$_2$ matrix from the GeO$_2\langle$Ge–NCs$\rangle$ heterolayer in deionized water or HF. On the basis of Raman and infrared spectroscopy data it was supposed that a stable skeletal framework from agglomerated Ge nanoparticles (amorphous or crystalline) was formed after the selective etching of GeO$_2\langle$Ge–NCs$\rangle$ heterolayers. The kinetics of air oxidation of amorphous porous Ge layers was investigated by scanning ellipsometry. Spectral ellipsometry allowed estimating the porosity of amorphous and crystalline porous Ge layers, which was $\sim$70 and $\sim$80%, respectively.

Язык публикации: английский


 Англоязычная версия: Semiconductors, 2018, 52:5, 628–631

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