R. R. Reznik, K. P. Kotlyar, I. P. Soshnikov, S. A. Kukushkin, A. V. Osipov, G. E. Cirlin, “MBE growth and structural properties of InAs and InGaAs nanowires with different mole fraction of In on Si and strongly mismatched SiC/Si(111) substrates”, Физика и техника полупроводников, 2018, том 52, выпуск 5,страница 522

Эта публикация цитируется в 2 статьях

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Technology

MBE growth and structural properties of InAs and InGaAs nanowires with different mole fraction of In on Si and strongly mismatched SiC/Si(111) substrates

R. R. Reznik^abcde, K. P. Kotlyar^a, I. P. Soshnikov^ac, S. A. Kukushkin^f, A. V. Osipov^f, G. E. Cirlin^abcd

^a St. Petersburg Academic University, Russian Academy of Sciences, 194021 St. Petersburg, Russia
^b ITMO University, 197101 St. Petersburg, Russia
^c Institute for Analytical Instrumentation, Russian Academy of Sciences, 190103 St. Petersburg, Russia
^d Peter the Great St. Petersburg Polytechnic University, 195251 St. Petersburg, Russia
^e Department of Engineering, Durham Unifersity, Durnam DH13Le, United Kingdom
^f Institute of Problems of Mechanical Engineering, Russian Academy of Science, 199178 St. Petersburg, Russia

Аннотация: The possibility of InAs nanowires MBE growth on silicon (111) substrates with a nanometer buffer layer of silicon carbide has been demonstrated for the first time. The NWs diameter turned out to be smaller than on the silicon substrate–the minimum of NWs diameter was less than 10 nm. In addition, dependence of structural properties of InGaAs nanowires on composition was studied.

Язык публикации: английский