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ЖУРНАЛЫ // Физика и техника полупроводников // Архив

Физика и техника полупроводников, 2018, том 52, выпуск 4, страница 467 (Mi phts5863)

Эта публикация цитируется в 2 статьях

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Optoelectronics, optical properties

Purcell effect in Tamm plasmon structures with QD emitter

A. R. Gubaidullinab, C. Symondsb, J. Bellessab, K. A. Ivanovac, E. D. Kolykhalovaade, M. E. Sasine, G. Pozinaf, M. A. Kaliteevskiacd

a St. Petersburg Academic University, Russian Academy of Sciences, 194021 St. Petersburg, Russia
b Univ Lyon, Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, F-69622, LYON, France
c ITMO University, 197101 St. Petersburg, Russia
d St. Petersburg Scientific Center, 199034 St. Petersburg, Russia
e Ioffe Institute, 194021 St. Petersburg, Russia
f Department of Physics, Chemistry and Biology, Linköping University, 58183 Linköping, Sweden

Аннотация: We study Tamm plasmon structure based on GaAs/Al$_{0.95}$GaAs distributed Bragg reflector covered by thin silver layer, with active area formed by InAs quantum dots. We have measured the spectral and angular characteristics of photoluminescence and performed theoretical calculation of the spontaneous emission rate (modal Purcell factor) in the structure by using $S$-quantization formalism. We show that for Tamm plasmon mode the spontaneous emission can be enhanced by more than an order of magnitude, despite absorption in metallic layer.

Язык публикации: английский


 Англоязычная версия: Semiconductors, 2018, 52:4, 452–457

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