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ЖУРНАЛЫ // Физика и техника полупроводников // Архив

Физика и техника полупроводников, 2018, том 52, выпуск 4, страница 487 (Mi phts5883)

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Spin Related Phenomena in Nanostructures

Quantum dynamics of a domain wall in the presence of dephasing

Claudio Castelnovoa, Mark I. Dykmanb, Vadim N. Smelyanskiyc, Roderich Moessnerd, Leonid P. Pryadkoe

a T.C.M.Group, Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, U.K
b Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824 USA
c Google Inc., Venice, California 90291, USA
d Max-Planck-Institut für Physik komplexer Systeme, 01187 Dresden, Germany
e Department of Physics & Astronomy, University of California, Riverside, California 92521, USA

Аннотация: We compare quantum dynamics in the presence of Markovian dephasing for a particle hopping on a chain and for an Ising domain wall whose motion leaves behind a string of flipped spins. Exact solutions show that on an infinite chain, the transport responses of the models are nearly identical. However, on finitelength chains, the broadening of discrete spectral lines is much more noticeable in the case of a domain wall.

Язык публикации: английский


 Англоязычная версия: Semiconductors, 2018, 52:4, 539–542

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