The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures $n$-InGaAs/GaAs after IR-illumination

The dependences of the longitudinal and Hall resistances on a magnetic field in $n$-InGaAs/GaAs heterostructures with a single and double quantum wells after infrared illumination are measured in the range of magnetic fields $B$ = 0–16 T and temperatures $T$ = 0.05–4.2 K.
Analysis of the experimental results was carried out on a base of two-parameter scaling hypothesis for the integer quantum Hall effect. The value of the second (irrelevant) critical exponent of the theory of two-parameter scaling was estimated.