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ЖУРНАЛЫ // Физика и техника полупроводников // Архив

Физика и техника полупроводников, 2021, том 55, выпуск 1, страница 84 (Mi phts6589)

Эта публикация цитируется в 4 статьях

Физика полупроводниковых приборов

Effect of total ionizing dose damage on 8-transistor CMOS star sensor performance

J. Fengab, Y.-D. Liabc, J. Fucab, L. Wenabc, C.-F. Heabc, Q. Guoabc

a Xinjiang Technical Institute of Physics & Chemistry, Urumqi 830011, China
b Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China
c University of Chinese Academy of Sciences, Beijing, China

Аннотация: The effects of total ionizing dose (TID) radiation from $^{60}$Co gamma-rays on an 8-transistor global shutter exposure complementary metal-oxide semiconductor image sensor (CIS) within a star sensor is presented to analyze the sources of star sensor performance degradation and the decrease of attitude measurement accuracy. The dark current, dark signal non-uniformity, and photon response non-uniformity versus the TID are investigated. The signal-to-noise ratio, star diagonal distance accuracy, and star point centroid positioning accuracy of the star sensor versus the TID are also analyzed. By establishing the correlation between space radiation, CIS noise, and star sensor performance parameters, the transfer mechanism of CIS parameter degradation to star sensor parameter degradation is revealed.

Ключевые слова: star sensor, 8-transistor CIS, total ionizing dose effect, performance degradation.

Поступила в редакцию: 28.07.2020
Исправленный вариант: 28.07.2020
Принята в печать: 01.09.2020

Язык публикации: английский


 Англоязычная версия: Semiconductors, 2021, 55:1, 108–115


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