TlGaN quantum-dot photodetectors

Due to the lack of work in structures containing thallium (Tl), this work is devoted to study of Ga$_8$Tl$_2$N quantum-dot photodetectors. Parameters are specified first. This structure is shown to have low absorption. Enough quantum efficiency is obtained. This detector works at 360–460 nm and peaked at 410 nm, which can be used in optical coherence tomography applications.