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ЖУРНАЛЫ // Физика и техника полупроводников // Архив

Физика и техника полупроводников, 2021, том 55, выпуск 8, страница 680 (Mi phts6621)

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Effect of complexing agents on structural, morphological, and optical properties of chemically deposited ZnO thin films

A. Raidou

Materials and Subatomic Physics Laboratory, Department of Physics, Faculty of Sciences, Ibn Tofail University, B.P 133, 14000 Kénitra, Morocco

Аннотация: Two ZnO thin films have been chemically elaborated on glass substrates by successive ionic layer adsorption and reaction method using two different complexing agents, ammonia and ammonium hydroxide. X-ray diffraction study confirmed the hexagonal wurtzite structure for both films that are polycrystalline with preferential direction (002). Scanning electron microscopy showed an agglomeration of small grains throughout the substrate surfaces, with morphological changes and the existence of an uncovered part of substrates. The film prepared using NH$_4$OH showed a higher transmittance. The optical band gap values for the films are close to 3.36 and 3.33 eV, respectively.

Ключевые слова: thin films, ZnO, complexing agents, SILAR method, semiconductors.

Поступила в редакцию: 22.08.2020
Исправленный вариант: 22.08.2020
Принята в печать: 09.02.2021

Язык публикации: английский


 Англоязычная версия: Semiconductors, 2021, 55:8, 691–695


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