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Физика и техника полупроводников, 2020, том 54, выпуск 8, страница 706 (Mi phts6653)

Эта публикация цитируется в 3 статьях

Поверхность, границы раздела, тонкие пленки

A comparative study on CdS film formation under variable and steady bath-temperature conditions

R.K.K.G.R.G Kumarasingheab, W. G. C. Kumaragec, R. P. Wijesunderad, N. Kaure, E. Cominie, B. S. Dassanayakeab

a Postgraduate Institute of Science, University of Peradeniya, Peradeniya, Sri Lanka
b Department of Physics, University of Peradeniya, Peradeniya, Sri Lanka
c Research and International Affairs, Sri Lanka Technological Campus, Padukka, Sri Lanka
d Department of Physics, Faculty of Science, University of Kelaniya, Kelaniya, Sri Lanka
e Department of Information Engineering, Universitá Degli Studi Di Brescia, Brescia, Italy

Аннотация: The deposition temperature of the bath in chemical-bath-deposited cadmium-sulfide thin films can directly affect the optical, electrical, structural as well as morphological properties of deposited thin films. The reporting work discusses the properties of chemical-bath-deposited cadmium-sulfide thin films deposited under steady chemical- bath temperature conditions at both 40 and 80$^\circ$C and compares with films formed under variable bath-temperature conditions by varying the temperature of the chemical bath from 40 to 80$^\circ$C and 80 to 40$^\circ$ C while depositing. The optical, electrical, structural, and morphological properties of the deposited films were examined by using ultraviolet-visible spectroscopy, photo-electrochemical cell, Mott–Schottky measurements, grazing incident X-ray diffractograms, scanning electron microscopy, and profilometry. According to the results, films deposited under steady chemical-bath temperature conditions show better optoelectronic properties compared to the rest, while films fabricated at 40$^\circ$ C are the best.

Ключевые слова: CBD, CdS, bath temperature, variable bath temperature, steady bath temperature.

Поступила в редакцию: 16.10.2019
Исправленный вариант: 16.12.2019
Принята в печать: 18.02.2020

Язык публикации: английский


 Англоязычная версия: Semiconductors, 2020, 54:8, 838–843


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