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ЖУРНАЛЫ // Физика и техника полупроводников // Архив

Физика и техника полупроводников, 2020, том 54, выпуск 11, страница 1258 (Mi phts6674)

NANOSTRUCTURES : PHYSICS AND TECHNOLOGY 28th International Symposium (Minsk, Republic of Belarus, September, 2020)
Excitons in Nanostructures

Modeling of exciton exchange interaction in GaAs/AlGaAs quantum wells

E. S. Khramtsov, B. F. Gribakin, A. V. Trifonov, I. V. Ignatiev

Spin Optics Laboratory, St. Petersburg State University, 198504 St. Petersburg, Petrodvorets, Russia

Аннотация: In this work, we study the exchange interactions between two excitons in the GaAs/AlGaAs quantum wells of various widths. We numerically solved the Schrödinger equation for an exciton in a quantum well to find the two-exciton wave functions and to calculate the exchange integral. The results suggest that the strongest interactions between excitons occur in the quantum wells of widths of about 40–50 nm, with the exchange energy being of about of 9 $\mu$eV for an exciton density of 1/$\mu$m$^2$.

Ключевые слова: quantum wells, exciton, exchange interaction.

Поступила в редакцию: 23.06.2020
Исправленный вариант: 23.07.2020
Принята в печать: 27.07.2020

Язык публикации: английский


 Англоязычная версия: Semiconductors, 2020, 54:11, 1503–1505


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