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ЖУРНАЛЫ // Физика и техника полупроводников // Архив

Физика и техника полупроводников, 2020, том 54, выпуск 11, страница 1261 (Mi phts6677)

NANOSTRUCTURES : PHYSICS AND TECHNOLOGY 28th International Symposium (Minsk, Republic of Belarus, September, 2020)
Excitons in Nanostructures

Energy spectrum in a shallow GaAs/AlGaAs quantum well probed by spectroscopy of nonradiative broadening of exciton resonances

A. S. Kurdyubova, B. F. Gribakina, A. V. Mikhailova, A. V. Trifonova, Yu. P. Efimovb, S. A. Eliseevb, V. A. Lovtsyusb, I. V. Ignatieva

a Spin Optics Laboratory, St. Petersburg State University, 198504 St. Petersburg, Petrodvorets, Russia
b Resourse Center "Nanohotonics", St. Petersburg State University, 198504 St. Petersburg, Petrodvorets, Russia

Аннотация: The energy spectrum of the exciton and carrier states in a shallow GaAs/AlGaAs quantum well is experimentally studied by means of the spectroscopy of the nonradiative broadening of exciton resonances and the spectroscopy of the photoluminescence excitation. The observed peculiarities of the spectra are treated using the numerical solution of the one-dimensional Schrödinger equation for free carriers and three-dimensional equation for excitons in the quantum well. The conduction and valence band offsets in the shallow GaAs quantum well are determined.

Ключевые слова: exciton spectroscopy; GaAs/AlGaAs quantum well; nonradiative broadening.

Поступила в редакцию: 23.06.2020
Исправленный вариант: 23.07.2020
Принята в печать: 27.07.2020

Язык публикации: английский


 Англоязычная версия: Semiconductors, 2020, 54:11, 1514–1517


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