M. I. Mitrofanov, G. V. Voznyuk, S. N. Rodin, W. V. Lundin, V. P. Evtikhiev, A. F. Tsatsulnikov, M. A. Kaliteevski, “Calculation of the Ga+ FIB ion dose distribution by SEM image”, Физика и техника полупроводников, 2020, том 54, выпуск 12,страница 1390

Эта публикация цитируется в 4 статьях

NANOSTRUCTURES : PHYSICS AND TECHNOLOGY 28th International Symposium (Minsk, Republic of Belarus, September, 2020)
Nanostructure Characterization

Calculation of the Ga+ FIB ion dose distribution by SEM image

M. I. Mitrofanov^a, G. V. Voznyuk^a, S. N. Rodin^a, W. V. Lundin^a, V. P. Evtikhiev^a, A. F. Tsatsulnikov^b, M. A. Kaliteevski^c

^a Ioffe Institute, 194021 St. Petersburg, Russia
^b SHM R&E Center, Russian Academy of Sciences, 199034 St. Petersburg, Russia
^c ITMO University, 197101 St. Petersburg, Russia

Аннотация: A new approach for calculating the ion dose spatial distribution of the focused ion beam is proposed. The approach is based on the analysis of the secondary electron microscopy image of the area irradiated by the focused ion beam.

Ключевые слова: FIB, focused ion beam distribution, ion beam lithography.

Поступила в редакцию: 23.06.2020
Исправленный вариант: 23.07.2020
Принята в печать: 27.07.2020

Язык публикации: английский