RUS  ENG
Полная версия
ЖУРНАЛЫ // Физика и техника полупроводников // Архив

Физика и техника полупроводников, 2020, том 54, выпуск 12, страница 1391 (Mi phts6690)

Эта публикация цитируется в 4 статьях

NANOSTRUCTURES : PHYSICS AND TECHNOLOGY 28th International Symposium (Minsk, Republic of Belarus, September, 2020)
Nanostructure Characterization

Spatial and hyperfine characteristics of SiV$^-$ and SiV$^0$ color centers in diamond: DFT simulation

A. P. Nizovtsevab, S. Ya. Kilina, A. L. Pushkarchukcd, S. A. Kutend, N. A. Poklonskie, D. Michelsf, D. Lyakhovf, F. Jelezkog

a Institute of Physics, National Academy of Sciences of Belarus, 220072 Minsk, Belarus
b National Research Nuclear University "MEPhI", 115409 Moscow, Russia
c Institute of Physical-Organic Chemistry, Nat. Acad. Sci. of Belarus, 220072 Minsk, Belarus
d Institute for Nuclear Problems, Belarusian State University, 220030 Minsk, Belarus
e Physics Department, Belarusian State University, 220030 Minsk, Belarus
f Computer, Electrical and Mathematical Science and Engineering Division, 4700 King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
g Institute for Quantum Optics, Ulm University, 89069 Ulm, Germany

Аннотация: One of the most promising platforms to implement quantum technologies are coupled electron-nuclear spins in diamond in which the electrons of paramagnetic color centers play a role of “fast” qubits, while nuclear spins of nearby $^{13}$C atoms can store quantum information for a very long time due to their exceptionally high isolation from the environment. Essential prerequisite for a high-fidelity spin manipulation in these systems with tailored control pulse sequences is a complete knowledge of hyperfine interactions. Development of this understanding for the negatively charged “silicon-vacancy” (SiV$^-$) and neutral (SiV$^0$) color center, is a primary goal of this article, where we are presenting shortly our recent results of computer simulation of spatial and hyperfine characteristics of these SiV centers in H-terminated cluster C$_{128}$[SiV]H$_{98}$ along with their comparison with available experimental data.

Ключевые слова: silicon-vacancy (SiV) color center, diamond, $^{13}$C nuclear spin, hyperfine interaction, density functional theory.

Поступила в редакцию: 23.06.2020
Исправленный вариант: 23.07.2020
Принята в печать: 27.07.2020

Язык публикации: английский


 Англоязычная версия: Semiconductors, 2020, 54:12, 1685–1688


© МИАН, 2024