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ЖУРНАЛЫ // Физика и техника полупроводников // Архив

Физика и техника полупроводников, 2020, том 54, выпуск 12, страница 1392 (Mi phts6691)

Эта публикация цитируется в 2 статьях

NANOSTRUCTURES : PHYSICS AND TECHNOLOGY 28th International Symposium (Minsk, Republic of Belarus, September, 2020)
Nanostructure Characterization

Hyperfine characteristics of quantum registers NV-$^{13}$С in diamond nanocrystals formed by seeding approach from isotopic aza-adamantane and methyl-aza-adamanthane

A. P. Nizovtsevab, S. Ya. Kilina, A. L. Pushkarchukcd, S. A. Kutend, A. S. Gusevb, F. Jelezkoe

a Institute of Physics, National Academy of Sciences of Belarus, 220072 Minsk, Belarus
b National Research Nuclear University "MEPhI", 115409 Moscow, Russia
c Institute of Physical-Organic Chemistry, National Academy of Sciences of Belarus, 220072 Minsk, Belarus
d Institute for Nuclear Problems, Belarusian State University, 220030 Minsk, Belarus
e Institute for Quantum Optics, Ulm University, 89069 Ulm, Germany

Аннотация: We predict the characteristics of hyperfine interactions $(hfi)$ for a number of electron-nuclear spin systems NV-$^{13}$С in diamonds grown by seeding approach from the specific isotopic aza-adamantane or methyl-aza-adamantane molecules differing in $^{13}$C position in the precursor as well as in the orientation of the NV center in the post-obtained diamond. For the purpose we have used the spatial and $hfi$ data simulated previously for the cluster C$_{510}$ [NV]$^-$H$_{252}$. The data obtained can be used to identify (and correlate with the precursor used) the specific NV-$^{13}$С spin system by measuring the $hfi$-induced splitting in optically detected magnetic resonance spectra being characteristic for the NV-$^{13}$С system.

Ключевые слова: Nitrogen-vacancy (NV) color center, diamond, $^{13}$C nuclear spin, precursor, aza-adamantane, methyl-aza-adamantane, hyperfine interaction, density functional theory.

Поступила в редакцию: 23.06.2020
Исправленный вариант: 23.07.2020
Принята в печать: 27.07.2020

Язык публикации: английский


 Англоязычная версия: Semiconductors, 2020, 54:12, 1689–1691


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