Temperature effect of a substrate on optical properties of the thin films of the amorphous hydrogenated silicon deposited by a plasmo-chemical jet method

Researches of the films of the amorphous hydrogenated silicon received in the jet plasmochemical way are conducted, width of the energy gap is determined, concentration of Hydrogenium in films is calculated, and also dependence of width of the energy gap on concentration of Hydrogenium and temperature of a substrate is defined.
Deposition of thin films of amorphous silicon was carried out by the jet plasmochemical method different from standard methods the fact that the zone of decomposition of gas and a zone of a deposition of radicals are divided that excludes contact of reagents with walls of the building bag and the relevant canals of secondary reactions, the bound to heterogeneous processes on camera walls. On a surface of the growing film only products of primary interaction of electrons with molecules of silane gas react.
In the course of work a number of films with various original values of temperature of a substrate (Td = 100-300 $^{\circ}$C) was received, both at identical, and at different values of parameters of the flow ratio of plasma-forming gas Q, P power of glow discharge, for them width of the energy gap was determined and concentration of Hydrogenium is calculated. Eg value fluctuates from 1.63 to 1.98 eV, value of concentration H2 in films fluctuates from 9 to 31 %. These ratios say that a way of drawing (a dusting, drawing by a jet method in a glow discharge) and deposition parameters (T, RF power, shift etc.) define Eg (in limit of errors 0.1 eV) mainly because the content of Hydrogenium in exemplars depends on them. With temperature increase of a substrate, concentration of Hydrogenium decreases. Annealing of the received exemplars was made for confirmation of it. Annealing was carried out within 30 minutes at a temperature of 200 $^{\circ}$C, further was again measured values of width of the energy gap and concentration of Hydrogenium paid off. In process of annealing density of defects decreases on several orders and Eg increases. Therefore, as a result of Hydrogenium exit annealing leads to reconstruction of a structural grid and to change of optical properties of films.
Thus in work it was defined that the content of Hydrogenium increases in the films received by a jet method at decrease of temperature of a substrate, pressure drop of a silane and increase in power of the category, the content of Hydrogenium, in turn influences width of the energy gap. Change of width of the energy gap leads to change of optical properties of a film.