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JOURNALS // Computational nanotechnology // Archive

Comp. nanotechnol., 2017 Issue 3, Pages 24–26 (Mi cn140)

NANOSTRUCTURED MATERIALS

Two transitive AlxGa1-xP / GaP / Gayin1-yP photodiodes with a selective sensitivity in a vioelet and the middle of the ultraviolet band of the spectrum

M. A. Abdukadirov, N. A. Axmedova, A. S. Ganiyev

Tashkent University of information Technologies

Abstract: Structures and photoelectric properties of two-transition hetero-photo-diode structures based on AlxGa1-xP ($0 \le x \le 0.6$) and GayIn1-yP ($0.6 \le y \le 0.7$), as well as their main parameters, are presented. It is shown that investigated heterophotodiodesstudied have a divided spectral response in the violet and ultraviolet (UV) bands of the spectrum, promising in the systems of absorption spectrophotometric analysis and control of burning of organic substances by a differential method.

Keywords: semiconductor, heterostructure, photosensitivity, photoelectric properties, heterophotodiodes.



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