A. M. Kasimakhunova, R. Naymanbayev, L. K. Mamadaliyeva, R. A. Nurdinova, Sh. A. Olimov, “Ivestigating of some characteristics of an APT-structure with isovalent impurities in order to create devices for measuring and non-destructive controlling”, Comp. nanotechnol., 2018, Issue 2,Pages <nobr>72

05.14.00. POWER
05.14.01. COMPLEX POWER SYSTEMS

Ivestigating of some characteristics of an APT-structure with isovalent impurities in order to create devices for measuring and non-destructive controlling

A. M. Kasimakhunova^a, R. Naymanbayev^a, L. K. Mamadaliyeva^a, R. A. Nurdinova^a, Sh. A. Olimov^b

^a Fergana Polytechnic Institute, Fergana, Uzbekistan
^b Northern China University of Energy,The People’s Republic of China, Beijing

Abstract: This paper presents semiconductor films doped with isovalent impurities with an anomalously large photoelectric effect. An APT-photodetector of autonomous type with stable parameters and good degradation characteristics is presented and as a result optoelectronic voltage measuring transformers (OVMT) and current (OCMT) have been developed.

Keywords: abnormal photo tension(APT), photodetectors, electrooptical and magneto-optical phenomena, APT-structures, photoelectric state.