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JOURNALS // Computational nanotechnology // Archive

Comp. nanotechnol., 2014 Issue 1, Pages 11–16 (Mi cn2)

This article is cited in 1 paper

NANOELECTRONICS AND NANOMATERIALS

On the way to modeling large nanosystems at the atomic level

V. G. Zavodinskiia, O. A. Gorkushab

a Institute for Material Studies, Khabarovsk Scientific Center, Far Eastern Branch of the Russian Academy of Sciences
b Institute of Applied Mathematics, Far-Eastern Branch of the Russian Academy of Sciences

Abstract: It is shown that the variation principle can be used as a practical way to find the electron density and the total energy in the frame of the density functional theory without solving of the Kohn-Sham equation (so called orbital-free approach). On examples of dimers Na$_2$, Al$_2$, Si$_2$, P$_2$, K$_2$, Ga$_2$, Ge$_2$ and As$_2$ the equilibrium interatomic distances and binding energies were calculated in good comparison with published data. Results for Si-Al, Si-P, and Al-P dimers are close to results of Kohn-Sham calculations



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