S. A. Radzhapov, R. Kh. Rakhimov, M. Dzhanklich, M. A. Zufarov, B. S. Radzhapov, “Semiconductor nuclear radiation detectors on the basis of heterojunction structures of Al-<nobr>$\alpha$</nobr>Ge-pSi-Au for measurement of low intensive ionizing radiations”, Comp. nanotechnol., 2018, Issue 3,Pages <nobr>65

05.14.03 NUCLEAR POWER STATIONS
Semiconductor nuclear radiation detectors on the basis of heterojunction structures of Al-$\alpha$Ge-pSi-Au for measurement of low intensive ionizing radiations

S. A. Radzhapov^a, R. Kh. Rakhimov^b, M. Dzhanklich^a, M. A. Zufarov^a, B. S. Radzhapov^a

^a Physical-technical Institute, SPA «Physics-Sun», Academy of Sciences of the Republic of Uzbekistan
^b Institute of materials science «Physics-sun», Uzbekistan Academy of sciences. Tashkent, Uzbekistan

Abstract: In this paper, features of the development of nuclear radiation detectors 100 mm and thicknesses 0.5 mm of the sensitive region based on Al-nGe-pSi-Au structures are presented. The features of their volt-ampere and radiometric characteristics are shown.

Keywords: Semiconductor Al-nGe-pSi-Au detector, monocrystalline silicon p-tip, sensitive region, «dead» layer.