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JOURNALS // Computational nanotechnology // Archive

Comp. nanotechnol., 2019 Volume 6, Issue 1, Pages 65–68 (Mi cn228)

05.14.00. POWER
05.14.01 COMPLEX POWER SYSTEMS

Development of radometer based on silicon detectors with a big sensitive area

S. A. Radzhapova, R. Kh. Rakhimovb, B. S. Radzhapova, M. A. Zufarova, Sh. Sharifovc

a Physical-Technical Institute, Uzbekistan Academy of Sciences
b Institute for Material Sciencies of Academy of Sciencies of Republic Uzbekistan
c Navoi Department of the Academy of Sciences of the Republic of Uzbekistan. Navoi, Uzbekistan

Abstract: The paper presents the results of the development of manufacturing technology, as well as some data from studies of the electro physical and radiometric characteristics of semiconductor surface-barrier and hetero-transition Al-$\alpha$Ge-pSi-A detectors of large sizes (10 cm in diameter). In addition, the monitoring data of the radon concentration in the subsoil and in the air are presented. The monitoring results showed that the concentration values vary depending on temperature, humidity and time of day.

Keywords: monocrystalline silicon, semiconductor detectors, radiometer, radon, alpha particles, monitoring, subsurface layer.



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