S. A. Radzhapov, R. Kh. Rakhimov, B. S. Radzhapov, M. A. Zufarov, K. I. Vakhobov, “Development of silicon diffusion <nobr>$n - p$</nobr>-detectors of ionizing radiation”, Comp. nanotechnol., 2019, Volume 6, Issue 3,Pages <nobr>112

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05.14.00. POWER
05.14.08 POWER STATIONS ON THE BASIS RENEWABLE ENERGY

Development of silicon diffusion $n - p$-detectors of ionizing radiation

S. A. Radzhapov^a, R. Kh. Rakhimov^b, B. S. Radzhapov^a, M. A. Zufarov^a, K. I. Vakhobov^c

^a Tashkent Technical University
^b Institute of Materials Science «Physics-Sun», Uzbekistan Academy of Sciences
^c Tashkent State Technical University

Abstract: The paper presents an optimized manufacturing technology of silicon diffusion $n - p$-detectors, as well as some research data on the spectrometric characteristics of silicon diffusion detectors of charged particles.

Keywords: monocrystalline silicon, silicon diffusion detectors, alpha, – beta, – gamma radiation.

DOI: 10.33693/2313-223X-2019-6-3-112-115