R. A. Muminov, Y. Q. Toshmurodov, G. J. Ergashev, M. O. Yavqochdiyev, “Mathematical modeling of the diffusion process of a semiconductor detector”, Comp. nanotechnol., 2020, Volume 7, Issue 4,Pages <nobr>68

LETTERS TO THE EDITOR

Mathematical modeling of the diffusion process of a semiconductor detector

R. A. Muminov^a, Y. Q. Toshmurodov^b, G. J. Ergashev^a, M. O. Yavqochdiyev^b

^a Institute of Materials Science, SPA “Physics-Sun”, Academy of Science of Uzbekistan
^b Karshi branch of the Tashkent Institute of Irrigation and Agricultural Mechanization Engineers

Abstract: The article considers mathematical modeling of the technological process of drift of coordinate-sensitive detectors based on silicon with nuclear radiation, the sensor size of which is $50 \times 50 \times 1.5$ mm and $8$ bands, and compares them.

Keywords: diffusion, drift, surface concentration, diffusion, activation, energy.

UDC: 621.376.234

Received: 15.11.2020

DOI: 10.33693/2313-223X-2020-7-4-68-71