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JOURNALS // Computational nanotechnology // Archive

Comp. nanotechnol., 2022 Volume 9, Issue 4, Pages 11–16 (Mi cn389)

NANOTECHNOLOGY AND NANOMATERIALS

A program for calculating the projective range and straggling of ions in a solidusing the approximation of V.V. Yudin

Sh. B. Utamuradovaa, R. A. Muminovb, V. G. Dyskinc, O. F. Tukfatullina

a Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan named after Mirzo Ulugbek
b Physical-Technical Institute of the Scientific-Production Association “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
c Institute of Material Science of the Scientific-Production Association “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan

Abstract: Ion implantation is the basis of many technological processes in electronics and microelectronics. The main quantities characterizing the penetration of ions into a solid are as follows; the length of the path of the ion until it stops completely, the average value of the projection of the total path on the direction of motion $\bar R_p$, and the average normal deviation of the projection of the path $\Delta\bar R_p$. To calculate these values, computer programs SRIM, TRIM, and DYNE have been created, which require installation on a personal computer and occupy a large amount of hard disk space, which is not always justified in engineering practice. This paper describes an algorithm for a simple, installation-free program for calculating $\bar R_p$ and $\Delta\bar R_p$. The program algorithm is based on the Lindhard-Scharff-Schiott theory.

Keywords: ion, target, projective range, straggling, elastic energy loss, inelastic energy loss.

UDC: 539.1

Received: 23.06.2022
Accepted: 30.07.2022

DOI: 10.33693/2313-223X-2022-9-4-11-16



© Steklov Math. Inst. of RAS, 2024