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JOURNALS // Computational nanotechnology // Archive

Comp. nanotechnol., 2016 Issue 1, Pages 62–66 (Mi cn64)

This article is cited in 1 paper

MECHANICAL ENGINEERING TECHNOLOGY. NUCLEAR EQUIPMENT. ELECTRICAL TECHNOLOGY

Technological formation of large-size Si(Li) p-i-n radiation detectors

R. A. Muminov, S. A. Radzhapov, Y. Q. Toshmurodov, B. S. Radzhapov

Physical-Technical Institute, Uzbekistan Academy of Sciences

Abstract: In this report we consider physical and technological features of manufacture Si(Li) nuclear radiation detectors of large size (Ø$\ge$ 60 mm, W=4 mm) when necessary for the formation of Si(Li) p-i-n structure using a new method of carrying out the process of drift of lithium ions with the help of pulsed electric field.

Keywords: semiconductor Si(Li) p-i-n detectors, monocrystalline silicon, diffusion, drift, lithium, sensitive area.



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