E. Z. Imamov, T. A. Djalalov, R. A. Muminov, R. Kh. Rakhimov, “The difference between the contact structure with nanosize inclusions from the semiconductor photodiodes”, Comp. nanotechnol., 2016, Issue 3,Pages <nobr>203

This article is cited in 2 papers

SCIENTIFIC SCHOOL OF RAKHIMOV R. H.
NANOSTRUCTURED MATERIALS

The difference between the contact structure with nanosize inclusions from the semiconductor photodiodes

E. Z. Imamov^a, T. A. Djalalov^a, R. A. Muminov^b, R. Kh. Rakhimov^c

^a Tashkent University of Information Technology
^b Physical-Technical Institute, «Physics-Sun». Uzbekistan Academy of sciences
^c Institute of materials science, «Physics-sun». Uzbekistan Academy of sciences

Abstract: In the complex of works [1] has developed a fundamentally new model of the contact structure, which is formed on the illuminated surface of silicon by spraying nanoinclusions with great electrical capacitance from another semiconductor. Photovoltaic converters based on the new contact structure exhibit unique electrical properties. In this paper we show the important structural differences between the new contact and the traditional semiconductor photodiodes.

Keywords: solar energy, solar cell, nanoinclusions, quantum dots, nanoscale contact structure, nanoscale «p-n junction».

Language: English